Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress
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چکیده
Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials Cu penetration into low-k dielectric during deposition and bias-temperature stress Appl.
منابع مشابه
Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics
Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials Effect of vacuum ultraviolet and ...
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This work addresses the issue as to whether ultraviolet radiation of wavelengths longer than 200 nm can break Si-CH3 bonds in porous low-k dielectrics. To resolve this issue, porous SiCOH films (k = 2.3) were exposed to 4.9 eV (254 nm) ultraviolet (UV) radiation in both air and vacuum for 1 hour. Using Fourier Transform Infrared (FTIR) spectroscopy, the chemical structures of the dielectric fil...
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